| ^.ml-(lonauctoi ^product*., one, 20 stern ave. springfield, new jersey 07081 u.sa switchmode series npn silicon power darlington transistors with base-emitter speedup diode the MJ10004 and mj10006 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. they are particularly suited for line oper -ated switch-mode applications such as: features: 'continuous collector current - lc = 20 a "switching regulators ?inverters ?solenoid and relay drivers ?motor controls maximum ratings characteristic collector-emitter voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current-continuous -peak base current total power dissipation etc=25c 6tc= 100c derate above 25c operating and storage junction temperature range symbol vcev vcex(sus) vceo(sus) vebo lc 'cm 'b pd tj '"'"sto MJ10004 450 400 350 mj10005 500 450 400 8.0 20 30 2.5 175 100 1.0 - 65 to +200 unit v v v v a a w w w/c c thermal characteristics characteristic thermal resistance junction to case symbol rejc max 1.0 unit c/w 200 | 175 | 15 | 125 i 10 q 75 | 50 25 o a 0 figure -1 power derating \ x^ \ \ \ 25 50 75 100 125 150 175 200 tc,temper*ture(?c) telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 npn MJ10004 mj10005 20 ampere power darlington transistors 350-400 volts 175 watts to-3 c]~ ol- j-\ j* b ~ i i h /x > i MJ10004, mj10005, npn electrical characteristics ( tc = 25'c unless otherwise noted ) characteristic symbol min max unit off characteristics collector - emitter sustaining voltage ( lc = 250ma, ib = 0, velmip=rate vceo ) MJ10004 mj10005 collector cutoff current ( vce= rated vcev,rbe=50 ohm,tc=100c) collector cutoff current ( vcev= rated value,vm |
